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IPB100N04S2L-03詳細規格: 類別：FET - 單; 描述：MOSFET N-CH 40V 100A TO263-3; 系列：OptiMOS™; 制造商：Infineon Technologies; FET型：MOSFET N 通道，金屬氧化物; FET特點：邏輯電平門; 漏極至源極電壓333Vdss444：40V; 電流_連續漏極333Id4440a025000C：100A; 開態Rds（最大）0a0IdwwwwVgs0a025000C：3 毫歐 @ 80A，10V; Id時的Vgs333th444（最大）：2V @ 250µA; 閘電荷333Qg4440a0Vgs：230nC @ 10V; 輸入電容333Ciss4440a0Vds：6000pF @ 25V; 功率_最大：300W; 安裝類型：表面貼裝; 封裝/外殼：TO-263-3，D²Pak（2 引線+接片），TO-263AB; 供應商設備封裝：PG-TO263-3; 包裝：帶卷 (TR)

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