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HAT2279N-EL-E詳細(xì)規(guī)格: 類(lèi)別：FET - 單; 描述：MOSFET N-CH 80V 30A 5LFPAK; 系列：-; 制造商：Renesas Electronics America; FET型：MOSFET N 通道，金屬氧化物; FET特點(diǎn)：邏輯電平門(mén); 漏極至源極電壓333Vdss444：80V; 電流_連續(xù)漏極333Id4440a025000C：30A; 開(kāi)態(tài)Rds（最大）0a0IdwwwwVgs0a025000C：12.3 毫歐 @ 15A，10V; Id時(shí)的Vgs333th444（最大）：-; 閘電荷333Qg4440a0Vgs：60nC @ 10V; 輸入電容333Ciss4440a0Vds：3520pF @ 10V; 功率_最大：25W; 安裝類(lèi)型：表面貼裝; 封裝/外殼：8-PowerSOIC（0.156"，3.95mm）; 供應(yīng)商設(shè)備封裝：8-LFPAK-iV; 包裝：帶卷 (TR)

HAT2279N-EL-E供應(yīng)商

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